The
market is experiencing a rise in demand for emerging memory
technologies. This is due to significant growth in demand for faster,
highly scalable and low power memories. Moreover, high volatility in
prices of existing memories is compelling market players to search
for newer memories that can provide higher profit margin. North
America occupied 41.2% of the total market in 2012. Growth in Asia
Pacific region is led by demand from Japan, China and South Korea.
Besides computers and mass data storage, portable consumer
electronics is becoming more computationally intensive driven by the
rise of smart phones in this region and is giving rise to demand for
newer memory technologies.
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Next Generation Memory Technologies Market Report With Full TOC at
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Next
generation memory technologies include both volatile and non-volatile
technologies, however; industry is demonstrating more interest
towards non-volatile technologies. Among the non-volatile memory
technologies, FeRAM (ferroelectric random access memory) was the
leading memory type holding 66.9% of the total market for
non-volatile next generation memory technologies in 2012. This
technology has been around for quite some time now and has gained
leading position owing to faster performance and low power
consumption. It is well suited for applications such as gaming
consoles, mobile phones and smart cards. Other leading non-volatile
technologies include MRAM (magneto-resistive random-access memory)
and PCM (phase change memory). MRAM is expected to find application
in cache and as storage class memory. MRAM offers unlimited and
faster writes and is highly scalable. PCM is fast gaining demand in
mobile phone applications. Semiconductor industry is also displaying
significant interest toward ReRAM (resistive random access memory) as
it offers high density and is expected to find higher application in
mass storage.
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Mobile
phone was the major application segment for next generation memory
technologies in 2012, and held 66.7% of the total market. However,
cache memory and enterprise storage is anticipated to become the
largest application segment by 2019. Demand for faster and higher
number of read/writes is expected to drive the growth of next
generation memory technologies in this application segment. Fujitsu
Ltd. dominated the global next generation memory technologies market
with a share of 53.0% of the total market in 2012 followed by
Everspin Technologies, Inc. Fujitsu Ltd held its position owing to
higher sales of its FeRAM chips in 2012. However, several players are
now foraying into the market with introduction of newer technologies.
This would lead to significant change in company market shares over
the coming years. Other important players include Micron Technology,
Inc., SK Hynix Inc., Avalanche Technology Inc., Cypress Semiconductor
Corporation, Adesto Technologies Corporation Inc., Samsung
Electronics Co., Ltd., Crossbar Inc., and Winbond Electronics
Corporation.
Next
Generation Memory Technologies Market
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all Press Releases:
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By
product type
Non-volatile
next generation memory technologies
ReRAM
(Resistive random-access memory)
PCM
(Phase-change memory)
MRAM
(Magneto-resistive random-access memory)
FeRAM
(Ferroelectric RAM)
Others
(Racetrack, CBRAM, etc.)
Volatile
next generation memory technologies
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all Article :
http://www.transparencymarketresearch.com/articles.htm
By
interface type
PCIe
and I2C
SATA
SAS
DDR
By
application
Mobile
phones
Cache
memory and enterprise storage
Industrial
and automotive
Mass
storage
Embedded
MCU and smart card
By
geography
North
America
Europe
Asia
Pacific
Rest
of the World (RoW)
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